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Park min joo

B.S Department of printed electronics engineering, Sunchon Nantional unviersity

M.S & Ph.D Department of printed electronics engineering, Sunchon Nantional unviersity

LED, Thermoelectric energy harvester

parkmj@unist.ac.kr

Research

Patents

[1] Joon Seop Kwak, Min Joo Park, Fareen Adani Khaja, Chi-Chun Chen, US 008502192B2, LED with uniform current spreading and method of fabrication, PCT, 2013. 08. 06

[2]  곽준섭, 박민주, 손광정, 등록 번호 : 1013195630000, 반도체 발광 소자 및 그 제조 방법, 2013.10.11

[3]  곽준섭, 박민주, 손광정, 등록 번호 : 1012962650000, 반도체 발광 소자, 반도체 발광 소자 패키지 및 그 제조 방법, 2013.08.07

[4]  곽준섭, 박민주, 등록 번호 : 1011487580000, 발광다이오드 및 이의 제조방법, 2012.05.11

[5]  곽준섭, 박민주, 등록 번호 : 1011486730000, 나노구조 형광체가 구비된 발광다이오드 및 이의 제조방법, 2012.05.11

[6]  곽준섭, 박민주, 손광정, 최영환, 송용우, 박기영, 박민희, 심인식, 송영준, 김종석, 등록 번호 : 1012521280000, 발광다이오드를 이용한 잠금 장치 및 이를 이용한 보안방법, 2013.04.02

[7]  곽준섭, 박민주, 손광정, 등록번호 : 2004659390000 자외선 발광다이오드를 이용한 신발 살균기, 2013.03.12

[8]  곽준섭, 김용덕, 박민주, 손광정, 등록 번호: 1012192900000, 발광 다이오드 제조방법, 2013.01.02

[9]  곽준섭, 박민주, 등록 번호 : 1011269610000, 발광다이오드 및 이의 제조방법, 2012.03.07

[10] 곽준섭, 권광우, 강기만, 박민주, 등록번호 : 1011484440000, 백색 나노 발광다이오드 및 이의 제조방법, 2012.05.11

[11] 곽준섭, 박민주, 손광정, 등록번호 : 1013731520000, 반도체 발광 소자 및 그 제조방법, 2014.03.05

[12] 곽준섭, 박민주, 황성주, 등록번호 : 1013509230000, 반도체 발광 소자 및 그 제조방법, 2014.01.07

[13] 곽준섭, 황성주, 박민주, 등록번호 : 1013374860000, 반도체 레이저 다이오드 및 그 제조방법, 2013.11.29

[14] 곽준섭, 박민주, 황성주, 등록번호 : 1013342050000, 멀티 칩 반도체 레이저 다이오드 및 그 제조방법, 2013.11.22

[15] 곽준섭, 김용덕, 박민주, 손광정, 등록번호 : 1012674370000, 발광 다이오드 및 그 제조방법, 2013.05.20

[16] 곽준섭, 박민주, 등록번호 : 1011486730000, 발광다이오드 및 이의 제조방법, 2012.0.07

 

Papers

[1]  Min Joo Park, Kyoung Jin Choi, Joon Seop Kwak, “Enhanced color-conversion efficiency between colloidal quantum dot-phosphors and nitride LEDs by using nano-patterned p-GaN”J. Electroceramics, [2014]

[2]  Yang, Fan, Chunfeng Zhang, Chentian Shi, Min Joo Park, Joon Seop Kwak, Sukkoo Jung, Yoon-Ho Choi, Xuewei Wu, Xiaoyong Wang, MinXiao, "Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells " Applied Physics Letters, Vol 103 , Issue 12 (2013)

[3]  M. J. Park, S. J. Hwang, H. J. Kim, S. Jung, K. H. Bang, H. G. Kim, Y. Chang, Y. Choi, and J. S. Kwak, "Improved Light Extraction Efficiency of Nonpolar a-Plane GaN-Based LEDs Based on Embedded Pyramid-Shape Air-Gap Structure" Journal of Display Technology, Vol. 9, Issue 5, pp. 346-352 (2013)

[4]  Su-Hwan Yang, Jun Young Kim, Min Joo Park, Kwang-Hyuk Choi, Joon Seop Kwak, Han-Ki Kim, Ji-Myon Lee, “Low resistance ohmic contacts to amorphous IGZO thin films by hydrogen plasma treatment“, Surface and Coatings Technology, Vol. 206, Issue 24, 15, Pages 5067–5071 (2012)

[5]  Bin Jiang, Chunfeng Zhang, Xiaoyong Wang, Fei Xue, Min Joo Park, Joon Seop Kwak, Min Xiao, "Effects of reduced exciton diffusion in InGaN/GaN multiple quantum well nanorods", Optics Express, Vol. 20, Issue 12, pp. 13478-13487 (2012)

[6]  Joon Seop Kwak, Min Joo Park, "Correlation Between Specific Contact Resistance and Dislocations for Nonalloyed Ohmic Contacts to p-GaN" Journal of The Electrochemical Society, Vol. 156, Issue 9, H720-H723 (2009)

[7]  Seong Min Moon, Y. D. Kim, S. K.Oh, M. J. Park, Joon Seop Kwak,"Failure Analysis of InGaN/GaN High Power Light-Emitting Diodes Fabricated with ITO Transparent p-Type Electrode During Accelerated Electro-Thermal Stress", Journal of Nanoscience and Nanotechnology, Vol 12, Number 5, pp. 4177-4180(4) (2012)

[8]  C. H. Hong, S. M. Wie, M. J. Park, J. S. Kwak, "Electron Beam Irradiated ITO Films as Highly Transparent p-Type Electrodes for GaN-Based LEDs" Journal of Nanoscience and Nanotechnology, Vol 13, Number 8, pp. 5420-5423(4) (2012)

[9]  C. H. Hong, Y. J. Jo, H. A. Kim, M. J. Park, J. S. Kwak, "Improved Electrical and Optical Properties of ITO/Ag/ITO Films by Using Electron Beam Irradiation and Their Application to Ultraviolet Light-Emitting Diode as Highly Transparent p-Type Electrodes", Journal of Nanoscience and Nanotechnology, Vol 12, Number 5, pp. 4163-4167(5) (2012)

[10]  Min Joo Park, Joon Seop Kwak, "InGaN-Based Nano-Pillar Light Emitting Diodes Fabricated by Self-Assembled ITO Nano-Dots", Journal of Nanoscience and Nanotechnology, Vol 12, Number 5, pp. 4265-4268(4) (2012)

[11] Bin Jiang, Chunfeng Zhang, Xiaoyong Wang, Min Joo Park, Joon Seop Kwak, Jian Xu, Huichao Zhang, Jiayu Zhang, Fei Xue, Min Xiao, "The Impact of Carrier Transport Confinement on the Energy Transfer Between InGaN/GaN Quantum-Well Nanorods and Colloidal Nanocrystals" Advanced Functional Materials, Vol 22, Issue 15, pages 3146–3152 (2012)

[12] Min Joo Park, K. W. Kwon, Y. H. Kim, S. H. Park, Joon Seop Kwak, "Improved Light Extraction Efficiency of InGaN-Based Multi-Quantum Well Light Emitting Diodes by Using a Single Die Growth" Journal of Nanoscience and Nanotechnology, Vol 11, Number 5, pp. 4484-4487(4) (2011)

[13] Young Joon Yoon, S. W. Chae, B. K. Kim, Min Joo Park, Joon Seop Kwak, "Interfacial Reactions of Nano-Structured Cu-Doped Indium Oxide/Indium Tin Oxide Ohmic Contacts to p-GaN" Journal of Nanoscience and Nanotechnology, Vol 10, Number 5, pp. 3254-3259(6) (2010) 

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